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The silicon carbide has advanced property of wear-resistance, anti-corrosive, high heat conductivity & low dilatability and good intensity. They are widely applied as piston ring, bushing, bearing and vane in kettle, pump and compressor. They are also widely applied in mould.


Silicon carbide is formed in two ways, reaction bonding and sintering. Each forming method greatly affects the end microstructure.Reaction bonded SiC is made by infiltrating compacts made of mixtures of SiC and carbon with liquid silicon. The silicon reacts with the carbon forming more SiC which bonds the initial SiC particles.Sintered SiC is produced from pure SiC powder with non-oxide sintering aids. Conventional ceramic forming processes are used and the material is sintered in an inert atmosphere at temperatures up to 2000oC or higher.


Typical silicon carbide applications include:
*Fixed and moving turbine components
*Seals, bearings, pump vanes
*Ball valve parts
*Wear plates
*Kiln furniture
*Heat exchangers
*Semiconductor wafer processing equipment


Grade: Reaction Bonded Silicon Carbide (RSiC)

ParameterValue
Density3.00–3.05g/cm3
Hardness110 – 120 HS
Modulus of Elasticity394 Gpa
Tensile Strength28 Mpa
Bending Strength338 Mpa
Compression Strength1120 Mpa
Thermal Coeffcient of Expansion4.3 X 10-6                  1/0C
Heat-resisting Temperature (in                 atmosphere)13000C
Thermal Shock Coefficient46.5 cal/cm.sec)
Free-Silicon value≤10 %


Grade: Alpha Sintered Silicon Carbide (ASiC)

ParameterValue
Purity>97
Porosity<0.2%
Density3.1 g                /cm3
Hardness115 HS
Modulus of Elasticity450 Gpa
Bending Strength400 Mpa
Free-Silicon≤0.2%
Free-Carbon≤0.2%